The new trends in developing high power high frequency HFETs and device commercializing are emphasized,sum and up some problems in performance optimization and commercialization of GaN HFET such as two dimensional electric field and electron states,nanometer metal and dielectric layers,strain energy band engineering,and dielectric potential .
综述了GaNHFET研究中材料生长和工艺研究的新进展,介绍了器件向高频、大功率方向发展的现状及其应用前景,总结了优化器件性能和商品化问题中的二维场结构和电子态、纳米金属介质层、应变能带工程及介质势垒等重要课题。
First,by using the differential equations of the motion of the systems,the equation of energy variation is obtained,and the sufficient and necessary condition under which the conservation law of mechanical energy exists is given.
首先,利用系统的运动微分方程,获得能量变化方程,并给出机械能守恒律存在的充分必要条件。