Carbon nanotubes were separately synthesized by a new pulsed laser ablation (PLA) for in-situ growth method and CVD support method in this paper.
为了探索制备碳纳米管的新方法及其制备工艺，本文分别尝试采用了新的脉冲激光轰击原位生长法和CVD基体法两种方法来制备碳纳米管。
The effects of adding fluorine, chlorine, phosphorus and oxygen in C - H systems and the effects of adding oxygen, fluorine in C - S systems on the chemical transport reaction in the production of carbon nanotube (CNT) via chemical vapor deposition(CVD) have been calculated by using software developed by scientists at Russian Academy of Science.
利用俄罗斯科学院研制的软件计算分析了CVD法制备碳纳米管过程中在碳氢体系添加氟、氯、磷、氧等元素及在碳硫体系中加入氧、氟等元素对于化学传递反应的影响,结果表明,这些元素的加入有利于传递反应的进行。
Influences on the percentage of deposited carbon from hydrocarbon via chemical vapor deposition at 700 K to (1 500 K,)101×10~3 Pa and CO via chemical vapor deposition at 700 K to (1 200 K),101×10~3 Pa were calculated by use of the CVD (chemical vapor deposition) software developed by the scientists of Russia Academy of Science.
利用俄罗斯科学院研制的CVD(chemicalvapordeposition)软件计算了在101×103Pa和700K～1500K烃催化热解以及在101×103Pa和700K～1200KCO催化热解影响碳沉积率的因素,并根据碳沉积相边界点的反应物组成绘制了碳沉积边界曲线,预测了碳沉积区,计算结果对多壁碳纳米管的制备提供了有关的信息。
With TiCl4+O2 reaction system, nano-TiO2 powders were prepared by radio frequency plasma chemical vapor deposition (RF-PCVD).
采用高频等离子体化学气相沉积法(RF-PCVD)法,以TiCl4 + O2为反应体系,制备出了纳米级的TiO2粉体。
In this thesis,GeSi films were grown on glass substrates by PECVD.
采用等离子体CVD法在玻璃衬底上沉积 Ge Si薄膜 ,研究了不同生长条件下的样品的光学特性 ,从样品的紫外 -可见光反射谱和透射谱计算出光学带隙 ,发现随着 Ge含量的增加 ,薄膜的光学带隙减小。
Study on Synthesis of Carbon Nanotubes by Pulsed Laser Ablation for In-Situ Growth Method and CVD Supporting Method;
脉冲激光轰击原位生长法和CVD基体法制备碳纳米管研究
The pretreatment methods of cemented carbide substrate and their effects on CVD diamond film were mainly summarized.
本文重点对近年硬质合金基体表面预处理方法及其对CVD金刚石膜沉积的影响进行了综述。
Preparation and Characteristic of Carbon Related Wide Bandgap Semiconductor Materials Prepared by Chemical Vapor Deposition;
CVD制备碳基宽带隙半导体材料及其特性研究
Synthesis and Growth Mechanism of Carbon Nanotubes on Different Substrates Through CVD Method;
CVD法在不同基底上制备碳纳米管及其机制研究
Microstructure and Properties of a-Si_(1-x)C_x:H Thin Films Prepared by PECVDs;
等离子体CVD法制备a-Si_（1-x）C_x：H薄膜及其微结构和性能研究
Effect of Dilute Gas on Performance of CVD-SiC Fibers
稀释气体对CVD-SiC纤维性能的影响
Effect of Gas Flow and Gas Ratio on CVD SiC Coating
气体流量及配比对CVD SiC膜层的影响
The Fabrication of Continuous High Performance SiC Fiber by Chemical Vapor Deposition;
CVD法制备高性能SiC连续纤维技术
Computer Control System of Producing Carbon Nanotubes with CVD;
CVD法制备纳米碳管的计算机控制系统
Simulation of Growth Process of Titania Nanoparticles Synthesized by Flame CVD Process;
火焰CVD法制备TiO_2纳米颗粒的数值模拟
The Study of the Coating of Silicon Dioxide by CVD Utilizing TEOS-O_3;
CVD法采用TEOS-O_3沉积二氧化硅膜
Synthesis and Characterization of Aligned Carbon Nanotubes Prepared by CVD;
CVD法制备定向纳米碳管及其表征
Technical Study on Deposition of B-C Films by MWECR CVD Method;
MWECR CVD法制备B-C薄膜的工艺研究
Preparations and Characteration of single phosphorus-doped p-type ZnO nanowire
CVD法制备单根磷掺杂P型ZnO纳米线
The Analysis of CVD Process for High Purity Titanium
CVD法制备高纯钛形核过程动力学分析
Synthesis of multiwall carbon nanotubes by decomposition of methane over vanadium container catalysts
用含钒催化剂CVD法制备多壁纳米碳管
Fundamental Study on High-efficiency Polishing for CVD Diamond Thick Film;
CVD金刚石厚膜高效抛光的基础研究
Simulation on the Temperature and Pressure Field of CVD Diamond Blunt Aircraft under Flight;
CVD金刚石膜钝头体飞行温度与压力的仿真研究