The quality of SOI wafer mainly depends on the structure of Top-Si as well as BOX(Buried Oxide).
SOI晶圆材料正在成为制备IC芯片的主要原材料。
Study of the Single-Event Effect of SOI NMOSFET by 3-D Simulation;
SOI NMOSFET单粒子效应的3-D模拟
The Design of Three-Axis Accelerometer Based on SOI;
基于SOI的三轴压阻微加速度计的设计
Simulation experiment of tolerance of irradiation about domestic SOI 1750A microprocessor;
国产SOI 1750A微处理器抗辐射效应模拟试验
An ultracompact 3 dB coupler is designed and fabricated in silicon on insulator,based on 1×2 line tapered multimode interference (MMI) coupler.
采用线锥形结构 ,在 silicon- on- insulator(SOI)材料上设计并实现了一种新的紧缩型 3- d B多模干涉耦合器(MMI) 。
A 4×4 area modulation silicon on insulator (SOI) multimode interference coupler optical switch, composed of four cascaded 2×2 area modulation optical switches, has been designed.
根据区域调制多模干涉耦合器光开关的工作原理 ,以 2× 2区域调制多模干涉光开关为基础 ,采用级联的方式设计了 4× 4区域调制多模干涉SOI光波导开关。
Silicon on insulator(SOI) structure, as a very large scale integrated circuit(VLSI) wafer, has attractive features such as radiationhardening, no parasitic capacitance and latchup effect.
绝缘体上生长的薄单晶硅膜 (SOI)具有良好的横向绝缘、抗辐照、无锁存效应和无寄生电容 ,并能有效地提高硅集成电路的速度和集成度 ,在深亚微米 VL SI技术中 ,具有很大的优势和潜力。
Evolution of Wafer-Surface Preparation for Semiconductor Industry;
半导体产业中晶圆片表面处理的发展
The structural design of the wafer expansion device was put forward.
该装置可完成片盒、内圈和外圈的输入和取片动作,实现扩晶过程张紧力的调节控制、分离晶圆和衬架、排出空片盒和废弃的衬架等。
We present a FEM method for forecasting the suitable pressure on the retaining ring,which is critical in manufacturing good quality wafers.
随着晶圆直径的增加,在CMP加工过程中,晶圆边缘容易出现"过磨(over-grinding)"现象,降低了平坦度和晶圆利用率。
According to the characteristics,the modeling problem using Petri net for cluster tools in wafer fabrication was studied.
晶圆加工过程中使用的模块化组合设备具有可重构性,设备配置的复杂程度由晶圆加工工艺方案决定,针对这一特点,研究了晶圆加工系统的Petri网建模问题。