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reactive ion beam etching system/RIBE system

基本解释反应性离子束蚀刻系统

网络释义

1)reactive ion beam etching system/RIBE system,反应性离子束蚀刻系统2)reactive ion beam etching (RIBE),反应离子束蚀刻3)reactive ion beam etching,反应离子束刻蚀4)reactive ion etching system/RIE system,反应性离子蚀刻系统/RIE 系统5)ion beam etching system,离子束蚀刻系统6)hexode type reactive ion etching system,六角柱型反应性离子蚀刻系统

用法和例句

The silicon wafers were highly polished by reactive ion beam etching (RIBE) until surface micro-roughness was under 2 nm, and the hydrophilic glass and oxidized silicon wafer were dried and initially bonded in air for appropria.

利用反应离子束蚀刻(RIBE)对基片进行抛光,使得键合表面达到2 nm级的表面粗糙度。

Ar/CHF_3 reactive ion beam etching(RIBE) and the ion beam incidence angle could have great influence on the pattern s sidewall angle and the selectivity for etching the SiO_2 wafer with a photoresist mask.

介绍了Ar/CHF3反应离子束刻蚀和离子束入射角对图形侧壁陡直度及刻蚀选择比的影响。

In the fabrication of holographic-ion beam etching grating,a method combining ion beam etching and reactive ion beam etching is adopted to control the duty cycle.

在啁啾光纤光栅相位掩模的制作中,针对光刻胶光栅槽形要求比较高的问题,提出离子束刻蚀和反应离子束刻蚀相结合的方法,来实现对相位掩模槽形占宽比的控制。

Tolerance of ion beam etching on multilayer dielectric thin film reflector for spectrum reshaping

多层介质膜光谱调制反射镜的反应离子束刻蚀误差容限

APPLICATION OF ION BEAM MILLING TECHNIQUE TO JOSEPHSON DEVICE TECHNOLOGY

离子束刻蚀技术在约瑟夫逊器件工艺中的应用

Acceptable Error of Etching Depth in Ion Beam Etching Microlens

离子束蚀刻微透镜中蚀刻深度允许误差的研究

Generic specification of ion beam etching system

GB/T15861-1995离子束蚀刻机通用技术条件

The Mechanism Analysis of HgCdTe pn Junction Formed by Ion Beam Milling

离子束刻蚀HgCdTe成结机制分析

An Investigation of Reactive Ion Etching for Through Silicon Via Packaging Technology

反应离子刻蚀在穿透硅通孔封装技术中的应用研究

Inductively coupled plasma reactive ion etching of InSb photovoltaic detector arrays

InSb阵列探测芯片的感应耦合等离子反应刻蚀研究

study on step sidewall tilt in ion beam etching of Fresnel lens

离子束刻蚀过程中台阶侧壁倾斜现象研究

Fabrication of 128×128 Area Silicon Field Emission Arrays Using Ar Ion Beam Etching

128×128元硅场发射阵列的氩离子束刻蚀制作

Study ofⅠ-Ⅴand R_D-V Characteristics of Ion Beam Milling HgCdTe Loophole pn Junction (PartⅡ)

离子束刻蚀HgCdTe环孔pn结Ⅰ—Ⅴ、R_D—V特性的研究(下)

Study ofⅠ-Ⅴand R_D-V Characteristics of Ion Beam Milling HgCdTe Loophole pn Junction

离子束刻蚀HgCdTe环孔pn结Ⅰ-Ⅴ、R_D-V特性的研究(上)

Multilayer Dielectric Gratings: In-situ Monitoring of Duty Cycle of photoresist Mask and Ion-Beam-Etched Groove Depth;

介质膜光栅:光刻胶掩模占宽比和离子束刻蚀槽深的监控

Investigation of Planar and Channel Optical Waveguides Fabricated by Ion Implantation and Ion Beam Etching;

离子注入与离子束刻蚀制备平面和条形光波导的研究

plasma sputter combined etching

等离子溅射复合刻蚀

RIE of SiO_2 Nanoparticles and Its Application in Preparation of Silicon Nanopillar Array

二氧化硅纳米颗粒的反应离子刻蚀及其在硅纳米针尖制备中的应用(英文)

Gas-Assisted Etching of Micro-Hole Lattice Array on Lithium Niobate with Focused Ion Beam

用聚焦离子束气体辅助刻蚀在LiNbO_3上制备亚微米圆孔点阵

Investigation of Inductively Coupled Fluorocarbon Plasma and Etching of SiO_2;

碳氟感应耦合等离子体及其SiO_2介质刻蚀研究

The Study of the Etching Process with RF Cold Plasma at Atmospheric-pressure;

常压射频冷等离子体在刻蚀工艺中的应用研究

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