In this work, the iron contamination on the polished silicon wafers fabricated by different procedures has been probed by SPV, and then the dominant iron contamination sources during the fabrication process have been found.
本文通过SPV法测试不同流程制造的P型抛光硅片中的铁沾污 ,找到了在P型抛光硅片制造工艺过程中引入铁沾污的主要来源。
The Czochralski silicon monocrystalline polished wafer with a diameter of eight inches
8英寸直拉硅单晶抛光片
Material removal characteristic of silicon wafers in chemical mechanical polishing
单晶硅片化学机械抛光材料去除特性
Characteristic of Material Removal in Chemical Mechanical Polishing of Silicon Wafer Based on Abrasion Behavior
基于磨损行为的单晶硅片化学机械抛光材料的去除特性
Polished monocrystalline sapphire substrates
GB/T13843-1992蓝宝石单晶抛光衬底片
Study on High Quality Surface Protection of Single Crystal MgO Polishing Substrate;
单晶MgO抛光基片高质量表面保护研究
An Experimental Study of the Polishing Process for MgO Single Crystal Substrate;
单晶MgO基片抛光工艺的实验研究
Research of Polished Technology of VB GaAs Wafers
VB-GaAs单晶片抛光技术研究
Research on the Double-Sided Polishing Mechanism and Process Optimization for Silicon Wafer;
单晶硅双面抛光加工理论及工艺优化的研究
Influence of abrasive and chemical composition on chemo-mechanical polishing of MgO single crystal substrate
抛光液中磨料和化学成分对单晶MgO基片化学机械抛光的影响
Research on the Polishing of Silicon Wafer by Fixed Abrasive Pad
固结磨料抛光垫抛光硅片的探索研究
Preparation Nano-CeO_2 Particles and Its Polishing Performance for Si(100) and Si(111)
纳米CeO_2颗粒的制备及其对硅晶片(100)和(111)的抛光性能
CMP Effect and Super-smooth Surface Acquirement
化学机械抛光作用与单晶基片超光滑表面的获取
Chemical mechanical polishing for silicon wafer by composite abrasive slurry
利用复合磨粒抛光液的硅片化学机械抛光
Test methods for surface flatness of silicon polished slices
GB/T6621-1995硅抛光片表面平整度测试方法
Monocrystalline silicon ascut slices and lapped slices
GB/T12965-1996硅单晶切割片和研磨片
Research on the Laser Slotting on the Single Silicon Slice and Application;
激光在太阳能单晶硅圆片上划槽控制的研究与应用
An Experimental Study of the Polishing Process for CZT Crystal;
碲锌镉晶体基片抛光工艺的实验研究
Study on Surface Chemical Polishing of HgInTe Wafers
HgInTe晶片表面化学抛光研究