Large grain-sized polycrystalline silicon film obtained by SPC of a-Si: H film deposited by PCVD;
a-Si:H薄膜固相晶化法制备大晶粒多晶硅薄膜
Status and development of photovoltaic industry and producing technology of polycrystalline silicon;
光伏产业和多晶硅技术现状与发展
ESD protection devices on polycrystalline silicon;
ESD保护器件在多晶硅上的实现
Phosphorous gettering of cast multicrystalline silicon wafers from different positions of the ingot;
铸造多晶硅硅片的磷吸杂研究
on electrical properties of multicrystalline silicon prepared by metallurgic method was investigated.
利用四探针电阻测试仪、光学显微镜、扫描电镜、电感耦合等离子发射光谱仪、能谱分析等设备,从晶粒尺寸、组织形态以及晶界析出物等对冶金法制备的多晶硅电阻率的影响。
It is described that a series research of heavy phosphorous diffusion gettering, aluminum and combination of aluminum and phosphorous gettering (evaporation of aluminum on the back of the wafers) are used to fabricate multicrystalline silicon solar cells with different impurity concentration of interstitial oxygen.
对不同氧含量的太阳电池用多晶硅片进行了磷扩散吸杂,铝吸杂及磷铝联合吸杂的研究,用准稳态光电导衰减法(QSSPCD)和太阳电池效率测试系统测试了吸杂前后多晶硅片的少子寿命和IV曲线。
An out-chip method for measuring fatigue property of polysilicon thin film;
多晶硅薄膜疲劳特性片外测试方法
Solar cell and production of polysilicon;
太阳能电池及多晶硅的生产
Study on the large grain size poly-Si prepared by metal induced crystallization using nickel chemical source;
大尺寸化学Ni源金属诱导晶化多晶硅的研究
Reviewed is the recent progress in thin film solar cells including polycrystalline Si(poly-Si),amorphous Si(a-Si),CdTe and CuIn1-xGaxSe2(CIGS).
介绍了薄膜太阳电池在光伏技术中的地位,概述了包括多晶硅、非晶硅、CdTe、CuIn1-xGaxSe2(CIGS)在内的薄膜太阳电池的发展状况。
To obtain poly-Si with good uniformity and stability, a new method of solution-based metal-induced crystallization (S-MIC) with surface-embellishment was proposed in this paper.
提出了一种表面修饰的金属诱导晶化方法,以稳定地获得晶粒尺寸均匀的多晶硅薄膜。
Based on the dehydrogenation of a-Si∶H and the excimer laser annealing crystallization of a-Si thin films at various laser energy density, poly-silicon samples were obtained and characterized with XRD.
对氢化非晶硅(a-Si:H)进行了脱氢和不同能量密度的准分子激光晶化多晶硅的实验,对所得样品用X射线衍射表征。
In this paper,a novel poly-silicon pressure sensor is designed,further more a CMOS fully depleted integrated circuit is used to change output signal into 0～+5V industrial signal.
本文提出了一种新型的高温压力传感器 ,采用多晶硅作为压敏电阻 ,同时采用新的工艺措施与全耗尽CMOS放大电路集成在一起 ,将输出电压转换为 0～ +5V的输出信号 。
Due to the downscaling of device dimensions in CMOS technology,the metal gate electrodes will be required to replace conventional poly-silicon gate.
传统多晶硅栅已不能适应CMOS器件尺寸进一步减小的要求,因此需要金属栅极材料来取代多晶硅。
Polycrystalline silicon--Examination method--Zone-melting on phosphorus under controlled atmosphere
GB/T4059-1983硅多晶气氛区熔磷检验方法
dioxide polysilicon isolation
二氧化硅 多晶硅隔离
polysilicon fet
多晶硅场效应晶体管
polysilicon on oxide region
氧化物层上多晶硅区
cvd polysilicon
化学汽相淀积多晶硅
polysilicon gate ccd
多晶硅栅电荷耦合掐
Preparation of Poly-Silicon Thin Film in Low Temperature Using SiH_4 as Gas Source by ECR-PECVD;
以硅烷为气源用ECR-PECVD制备多晶硅薄膜
Fabrication of P-type Amorphous Silicon Thin Films and Poly-Silicom by PECVD;
PECVD法制备P型非晶硅薄膜及多晶硅薄膜
The Effect of Crystallization Ratio on Dark Conductivity of Poly-Silicon Thin Films;
多晶硅薄膜晶化率对暗电导率的影响
Preparation of Polycrystalline Silicon Film on Upgraded Metallurgical Silicon Substrate by ECR-PECVD;
在升级冶金级硅衬底上用ECR-PECVD沉积多晶硅薄膜
Studies on Preparing Poly-Si Thin Film on Ssp Substrate at Low-temperature;
以硅带为衬底低温制备多晶硅薄膜的研究
Research of Nc-Si/c-Si Heterojunction MOSFETs Pressure-magnetic Mutli-sensor;
纳米硅/单晶硅异质结MOSFETs压/磁多功能传感器研究
The Investigation on Si_3N_4 Coating in the Process of Mc-Si Purification by Physical Metallurgical Method
冶金法提纯多晶硅过程中氮化硅涂层的研究
The low energy consumption technology of SiCl_4 from subsidiary of polysilicon
多晶硅副产物四氯化硅的低耗能回收技术研究
Oxidation Behaviors of Poly- and Single Crystalline Transition-Metal Disilicides;
过渡族金属二硅化物单晶和多晶的氧化
A Research on Driving Module of Poly-Si TFT OLED;
多晶硅薄膜晶体管有机发光显示模块的研制
Studies on Grain-boundary States in Polysilicon Films FET;
多晶硅薄膜场效应结构的晶粒间界能态分布
Study and Simulation on Reliability of Poly-Si Thin Film Transistor;
多晶硅薄膜晶体管可靠性研究及其模拟