A kind of InSb-In eutectic film based magnet sensitive resistance is adopted for replacing the Hall sensing element in automotive electronic ignition system.
根据汽车点火系统的要求,综合考虑价格因素及实际的安装结构,设计了一种用锑化铟-铟共晶体磁敏电阻代替霍耳元件的电子点火系统,该系统不改变原系统的机械结构,仅在原分电器的基础上做微小的改动,因此其安装简便,且价格便宜,可以投入实施。
A relatively omnidirectional vibration sensor made of InSb-In eutectic film magnetoresistance is introduced.
本文最新研制了一种用锑化铟-铟(InSb-In)共晶体薄膜磁阻制成的准全方位振动传感器。
Amorphous InSb(a-InSb) films on glass substrate were deposited by RF magnetron sputtering technology.
在玻璃衬底上用射频磁控溅射技术进行了非晶态锑化铟(a-InSb)薄膜的低温生长。
Test method for resistivity and hall coefficient indium antimonide single crystals
GB/T11297.7-1989锑化铟单晶电阻率及霍耳系数的测试方法
Standard method for showing and measuring dislocation etch pits in indium antimonide single crystal
GB/T11297.6-1989锑化铟单晶位错蚀坑的腐蚀显示及测量方法
" Indium antimonide polycrystal, single crystals and as-cut slices"
GB/T11072-1989锑化铟多晶、单晶及切割片
Preparation and Characterization and Optical Characteristics of InSb Nano-Crystal;
锑化铟纳米晶体的制备表征和光学性质的研究
NNUMERICAL ANALYSIS OF THERMAL AND FLOW FIELD IN THE GROWTH OF SINGLE-CRYSTAL INP
磷化铟单晶生长中的传热和流动分析
A Study of Mechanical Activation Enhancing Indium Leaching from Antimony Oxide and Separation between Antimony and Indium;
机械活化强化锑渣氧粉浸铟以及锑铟分离的工艺研究
optically optimal indium antimonid infrared detector
光优型锑化铟红外探测器
indium-antimonide submillimeter photoconductive detector
锑化铟亚毫米波光电导探测器
Design of ion Implantation of InSb p-on-n Photovoltaic Devices
锑化铟p-on-n光伏器件的离子注入设计
Narrow-gap materials such as InSb have the requisite high mobility.
锑化铟之类的窄能隙材料有我们要的高迁移率。
Damage Mechanism of InSb Detectors (PV) when Laser Irradiated
激光辐照光伏型锑化铟探测器的损伤机制研究
Study on Readout Circuits Technology for InSb IRFPA;
锑化铟红外探测器信号处理电路技术研究
Study on the Application of InSb IR Detector in Detectors Array Target
室温锑化铟在探测器阵列靶中应用问题研究
Synthesis and Control of Indium Oxide and Indium Phosphide Nanoscale Building Blocks;
氧化铟和磷化铟纳米结构单元的合成与控制
Study of In Segregation Phenomena during AgGa(1-x)In_xSe_2 Crystal Growth
硒铟镓银单晶生长过程中In分凝现象研究
Through experiments, the conclusions can be drawn as follows:1 Under mechanical activation conditions, the effect of each factor influencing theindium leaching is: the initial concentration of sulfuric acid>the initial concentration of hydrochloric acid>activation time>liquid-solid ratio.
1 通过正交和单因素试验,作出规律图线,确定铟和锑浸出的最佳工艺条件。
Study of Growth and Improvement of Optical Properties of Indium-Doped Lithium Niobate;
铟掺杂铌酸锂晶体生长及光学性能优化的研究
Synthesis and Properties of Indium Hydrodate/Oxide and Yttrium Hydrodate/Oxiede and Photonic Crystals
铟、钇氢氧化物和氧化物以及光子晶体的制备与性能研究