A new small signal physical model of InP-based composite channel high electron mobility transistor;
一种新的磷化铟复合沟道高电子迁移率晶体管小信号物理模型
Design and growth of composite channel of InP HEMTs;
InP-HEMT中复合沟道的设计与生长
A new method is used to simulate InGaAs/InP composite channel high electron mobility transistors(HEMTs).
采用一种新方法对InGaAs/InP复合沟道高电子迁移率晶体管进行了模拟。
The effects of the tip shape of V-groove on drag reduction and flow field characteristics by numerical analysis;
V型沟槽尖峰形状对减阻效果及流场特性影响的数值分析
The flow in turbulent boundary layer and the viscous drag over V-groove surface are numerically simulated using the RANS formula and RNG k-ε turbulence model.
采用雷诺平均N-S方程和RNGk-ε湍流模型计算V型沟槽面的湍流边界层流动和粘性阻力,研究了沟槽尖峰形状和雷诺数对减阻效果的影响规律,初步分析了沟槽面减阻机理。
The flow in turbulent boundary layer and the viscous drag over V-groove surface are numerically simulated by using the RANS formula and RNG-turbulence model.
采用雷诺平均N-S方程和RNGk-ε湍流模型计算V型沟槽面的湍流边界层流动和黏性阻力,通过改变来流速度大小和沟槽面布置位置,研究了雷诺数对沟槽减阻特性的影响规律。