Bridgman

Ni _ 3 Al monocrystal can be prepared by means of Bridgman directionalsolidification.

采用Bridgman定向凝固 方法可以制得Ni_3Al单晶体.

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The Bridgman method is widely used in the growth of single crystals.

许多单晶半导体材料的垂直生长都使用了Bridgman法.

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MnxCd 1 - xIn 2 Te 4 ingots were grown by Bridgman method.

本文首次采用Bridgman法生长 了Mn_ xCd_(1-x) In_ 2Te_4晶体,并研究了晶体中相的形貌、结构、成分和晶体中各组元沿轴向和径向的成分分布.

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With the polycrystal, PbI _ 2 single crystal with size of? 15 mm ×30 mm has been grown by vertical Bridgman method.

以此为原料,用垂直Bridgman法生长出尺寸为? 15mm×30mm的PbI2单晶锭.

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Single crystal of Cr ~ ( 3 + ): LiCaAlF _ 6 was grown by vertical Bridgman method from stoichiometric composition melt.

用垂直Bridgman法从化学计量比组份的熔体中长出Cr~ ( 3+ ): LiCaAlF_6单晶.

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Sb doped PbWO 4 crystals have been grown by means of modified Bridgman method.

采用改进的布里奇曼(Bridgman)法生长了掺杂Sb2O3的PbWO4晶体.

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In this paper, Cr ∶ LiCAF crystal grown by the Bridgman method and its flashlamp pumped operation are reported.

本文报道了用Bridgman法生长的优质大尺寸Cr∶LiCAF晶体及其闪光灯泵浦性能研究.

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The Bridgman method was used in the vertical growth of single crystal semiconducting materials.

单晶半导体材料的垂直生长都使用了Bridgman法.

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Growth of KCl : Sr ￣ ( 2 + ) crystal by RAP - Bridgman method is reported in this paper.

本文采用反应气氛布里奇曼法生长了KCl:Sr~ ( 2+ ) 晶体.

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An analysis for the growth process of PbI 2 single crystal by bridgman method has been made.

本文分析了用布里奇曼法生长碘化铅单晶体的结晶过程.

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Several types of macro - defects existed in the BGO crystal grown by the Bridgman method.

下降法生长的BGO晶体中存在几种典型的 宏观 缺陷.

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Large size CaF _ 2 crystal has been grown by the Bridgman - Stockbarger method using a graphite crucible.

采用真空坩埚下降法在石墨坩埚中生长了大尺寸CaF_2晶体.

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High purity NaCl single crystals have been obtained by areactive atmosphere processing ( RAP ) based on the Bridgman technique.

本文使用反应气氛法(ReactiveAtmosphere Processing 简称RAP ) Bri-dgman技术 生长高纯NaCl单晶体.

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