The generator is based on the avalanche transistors in a Marx bank circuit.
为了获得高功率、高重复频率的纳秒级光脉冲,介绍了一种基于M arx bank脉冲发生原理的纳秒脉冲激光驱动器的设计,以及设计过程中雪崩晶体管的选取。
Such generator outputed current impulses of 7 ns wide and 6 A high from the two-stage avalanche transistor matrix using the avalanche effect.
利用晶体 管的雪崩效应,通过两级雪崩晶体管阵列,得到了7 ns、6 A的大电流窄脉冲。
In this thesis, the current research status and performances of the short pulse generator are summarized; the physical principle of avalanche transistor is analyzed; and avalanche transistor is chosen based on the principle.
本文对探地雷达脉冲源技术的发展进行了总结,详细分析了雪崩晶体管的工作原理,雪崩晶体管的导通方式及其应用电路对雪崩管导通方式的影响,据此探讨了雪崩晶体管的选择。
Implementation of Compensation for Bias Voltage of Thermo-drift for APDs by Using AC1056;
用AC1056实现对雪崩光电二极管温漂的偏压补偿
In order to implement dynamic bias voltage compensation for the thermal drift of APD gain,high precision A/D and D/A circuits are designed.
为实现对雪崩光电二极管(APD)增益温漂的动态偏压补偿,设计了高精度的ADC和DAC电路系统,对APD可以达到毫伏级的偏压控制精度和0。
This paper discusses a new kind of detecting system for bioluminescence which based on APD.
本文介绍了一种基于雪崩光电二极管的生物发光检测仪器新方案,并与传统的微光测量方案和器件进行了比较。
In order to ensure the optimum operating of the avalanche photodiode(APD) in the laser gyro under different temperature conditions,an effect of the temperature on the avalanche gain is analyzed based on the principle of APD multiplication.
为保证激光陀螺中雪崩光电二极管(APD)在温度变化的情况下始终处于最佳工作状态,从APD的倍增机理出发,分析了温度对雪崩增益的影响,建立了虚警率与APD倍增因子的数学模型,并采用监测雪崩噪声平均过阈率的方法,得到器件的实际击穿电压温度系数γ=6。
The edge pre-breakdown of planar-type avalanche photodiode(APD) is resulted from the intense electric field at the junction bend.
平面型雪崩光电二极管(APD)在结弯曲处具有高的电场,导致在结边缘的提前击穿。
According to the requirements and the characteristics of the single-photon detect System,a water-cooling system based on thermoelectricity cooling accompanied by a temperature control instrument was developed to reduce the temperature of the detector avalanche photodiode(APD).
根据单光子探测系统的要求及其特点,采用半导体制冷技术,研制出了用于单光子探测的雪崩光电二极管(APD)的水循环散热制冷腔。
surface-controlled avalanche transistor
可控表面雪崩晶体管
semiconductor avalanche photodiode
半导体雪崩光电二极管
The thoery, structure, characteristics, and process of the superlattice avalanche photodiode are presented.
报道了超晶格雪崩光电二极管的工作原理、构、性及其制造工艺。
avalanche transit time diode
雪崩渡越时间二极管
planar avalanche photodiode
平面雪崩光电二极管
avalanche diode integrated amplifier
雪崩管集成功率放大器
gallium arsenide avalanche photodiode
砷化镓雪崩光电二极管
avalanche diode integrated oscillator
雪崩二极管集成振荡器
avalanche photodiode coupler
雪崩光电二极管耦合器
IMPATT (Impact Avalanche and Transist Time Diode )
碰撞雪崩及渡越时间二极管
impact avalanch transit time diode
碰撞雪崩渡越时间二极管
impatt oscillator
碰撞雪崩渡越时间二极管振荡器
avalanche transit time oscillator
雪崩渡越时间二极管振荡器
silicon-avalanche photodiode detector
硅雪崩光电二极管检测器
But let storm and avalanche do their worst,
可是，尽管风暴和雪崩肆意摧残，
Schottky-barrier avalanche photodiode
肖特基势垒雪崩光电二极管
Management of Land in Avalanche Areas Abroad
欧美国家对雪崩地区土地利用的管理
Temperature and Voltage characteristic for InGaAs/InP Avalanche photodiode
InGaAs/InP雪崩二极管的温度-电压特性