The optical system uses a high luminance ultraviolet LED for excitation source and a "Y" type fiber with different material for conduction of light.
介绍了以超亮紫外发光二极管为激发光源,两种不同材料构成的Y型光纤作为传光光路的光学检测系统。
Experimental study on extreme ultraviolet light generation from high power laser-irradiated tin slab;
基于强激光辐照固体锡靶产生极紫外光源的实验研究
It meets factory requirements when dyeing wastewater has been advanced treated by electrodeless ultraviolet photo catalyzing oxidation and microwave plasma enhanced activated carbon absorption.
印染废水经“无极紫外光催化氧化+微波等离子体强化活性炭吸附”工艺深度处理后,水质达到了车间用水要求,回用水与自来水的水质特性无明显差异,使用回用水和新鲜水染色,两者在特性和质量上没有明显的差异。
Extreme ultraviolet lithography(EUVL) is one of all candidate next-generation lithography technologies targeting 45 nm features,the industrial throughput should be more than 80 wafers-per-hour.
极紫外光刻(EUVL)技术是实现45 nm特征尺寸的候选技术之一,产业化设备要求300 mm硅片的产率大于每小时80片(80 wafer/h),此时入射到掩模版上的极紫外光功率密度很高,掩模版上的吸收层和Mo/Si多层膜将分别吸收100%和35%的入射光能量,从而导致其热变形,引起光刻性能下降,因此必须分析和控制掩模热变形。
The status of extreme ultraviolet lithography (EUVL),as the technology for nextgeneration lithography (NGL), in a rapidly developing stage is analyzed.
分析了极紫外光刻技术作为下一代光刻技术的首选技术目前飞速发展阶段的状况,表明欧、美、日、俄等国家和地区在该领域集中了大量的人力、物力的目标是将光刻精度提高到50nm。
The typical NGL technologies, like immersion ArF lithography, extreme ultraviolet lithography (EUVL) and electron beam Projection lithography (EPL), are compared.
通过比较几种具有较大潜力的NGL(浸没式ArF光刻机、极紫外光刻和电子束曝光 )的特点、开发现状和有待解决的关键技术 ,预言将来可能是以极紫外光刻、电子束曝光和某种常规光刻机结合的方式来实现工业、前沿科学技术需要的各种微米 /纳米级图形的制备。
Measure and Analysis of Discharge Produced Plasma EUV Spectrum
放电等离子体极紫外光谱测量及分析
Thermal Deformation of EUV Mask and its Influence on Lithographic Performance;
极紫外光刻掩模热变形及其对光刻性能的影响
Research on Precise Mechanism and Related Control Technologies of Euvl Stage;
极紫外光刻机工件台精密机械及控制相关技术
Study on the Photooxidation and Reuse of Knitting Wastewater with Microwave Electrodeless Discharge Lamp;
微波无极紫外光氧化处理针织废水及回用研究
Laser-produced Plasma Soft X-ray and EUV Source with Liquid Jet Target;
液体微流喷射靶激光等离子体软X射线—极紫外光源研究
silicon photodiode vacuum ultraviolet detector
硅光电二极管真空紫外探测器
The Optical Characteristic Studies of Space EUV Solar Telescope;
空间极紫外太阳望远镜光学性能研究
Investigation on Extreme Ultraviolet Lithography;
极紫外投影光刻中若干关键技术研究
Ultraviolet light or the ultraviolet part of the spectrum.
紫外光，紫外线的紫外光或光谱的紫外线部分
The Study of Novel Liquid Crystal Light Valve and Ultraviolet Photodiode Array;
新颖液晶光阀及紫外光电二极管阵列的研究
Two-mirror system design study of reduced projection optics for EUV Lithography;
极紫外投影光刻两镜微缩投影系统的光学设计
Development of Ultraviolet Multi anode (128×128) Microchannel Arrays Photomultiplier Tube
紫外多阳极(128×128)微通道阵列光电倍增管的研制
Performance Research of Organic Ultraviolet Photodetectors Based on Photovoltaic Diodes;
基于光伏二极管的紫外有机探测器件性能研究
Electrochemical behavior of ultraviolet-visible spectrum at the In_2O_3-SnO_2 electrode;
在In_2O_3-SnO_2电极上的紫外-可见光谱电化学行为
Effect of proton irradiation on transmittance of Al filter at EUV waveband
质子辐照对极紫外波段滤光片透过率的影响
Fluorescent ink: Ink with extreme brightness qualities which react to ultra violet light
荧光墨:对紫外线光起反应而产生极度光泽的油墨。
Anodizing of aluminium and aluminium alloys-Determination of the fastness to ultraviolet light of coloured anodic oxide coatings
GB/T12967.4-1991铝及铝合金阳极氧化着色阳极氧化膜耐紫外光性能的测定
Calculation of quantum efficiency of alkali halide photocathode materials in the extreme ultraviolet region
极端紫外波段碱卤化物光阴极材料量子效率计算