Behavior of Exciton in a PtI Complex in Electric Field;
PtI化合物激子的静电场行为
Exciton in a PNB Polymer and Its Response to Electrostatic Fields;
PNB聚合物的激子及其对静电场的响应
The Phonon Sidebands of Excitons Bound to NN 1 Trap in GaAs 1-x P x ∶N( x = 0.88) Alloys;
混晶GaAs_(1-x)P_x∶N(x=0.88)中NN_1对束缚激子发光的声子伴线
Binding energies of excitons in symmetrical GaAs/Al_(0.3)Ga_(0.7) As double quantum wells;
对称GaAs/Al_(0.3)Ga_(0.7)As双量子阱中激子的束缚能
Nanocrystals ZnO luminescence of excitons between visible band and ultraviolet band;
纳米ZnO在可见和紫外波段的激子发光
The trial wave functions of ρ and Z to couple are developed inthis paper, the binding energies of excitons in Ⅱ type In_(1-x) Ga_xAs /GaSb_(1-y)As_yquantum wells are calculated by means of variational method.
该文提出ρ和Z相耦合的试探波函数,采用变分法计算了Ⅱ型量子阱In_(1-x)Ga_xAs/GaSb_(1-y)As_y中激子的结合能。
The phenomenon of localization of an excition in the quantum system is analyled with two-level system theory.
研究了外场驱动下非对称耦合量子点分子中激子的动力学行为。
The phenomenon of the saturated absorption of the excition in the silicon nanoparticle is observed,and the maximum nonlinear refractive index change at 554 nm is about -6.
用泵浦 -探测技术研究了氢化纳米硅薄膜 (nc- Si:H)的非线性光学性质 ,观察到纳米 Si中激子的光吸收饱和现象 ,测得实验用样品在波长 5 5 4nm处有最大的折射率改变量Δn=- 6 。
The recent development of CQED has resulted in a major boost to both experimental and theoretical investigations of excition phenomena in semiconductor .
半导体微腔中腔量子电动力学现象已成为近年来研究的热点,本文对量子阱中激子效应对微腔激光器的影响进行了研究。
Effects of hydrogenic donor impurity position on the binding energy of a bound exciton in Ⅲ-nitrides quantum dots;
III族氮化物量子点中类氢施主杂质位置对束缚激子结合能的影响
The effects of calcining temperature and Sn dopant content on the properties of photoinduced charges of TiO2 were discussed in details, and the relationships between the structure and bound excitons as well as the characteristics of bound excitons of the as-prepared samples were reveale.
同时揭示了样品结构与表面光生束缚激子的关系及其特性。
This paper calculates the ground state energy and binding energy of abound exciton in GaAs/Ga1-xAlxAs material by using variational method and discussesthe results obtained.
用变分法计算了ＧａＡｓ／Ｇａ１－ｘＡｌｘＡｓ材料中束缚激子的基态能和结合能，并对计算结果进行讨论，得出当量子点半径取适当数值时人们有可能在更高温度下观测到量子点中的激子的结论。