Based on the basic concepts of quantum physics and classical picture,the concept of hole and the essentials of hole conduction and P type Hall effect are explained.
根据量子物理的基本概念和经典图像说明空穴概念以及空穴导电和P型霍尔效应的实
The electron conductivity and hole conductivity of the silver iodo-bromide T-grain crystal doped with K_4[Fe(CN)_6] was determined with Wagner polarization.
利用Wagner极化法研究了掺杂K4[Fe(CN)6]浅电子陷阱掺杂剂的溴碘化银T 颗粒晶体的电子电导率和空穴电导率,并与未掺杂的晶体样品进行对比,分别考察了实验温度、掺杂剂用量、掺杂位置等因素对实验结果的影响。
(After) the ionic current reached zero, the electric current was measured with vary voltage and then the electron conductivity and hole conductivity were determined.
根据Wanger直流极化法原理,采用可逆电极与阻塞电极并用的方法,对溴化银T颗粒乳剂微晶体在直流电场中进行极化,当离子电流为零时测得其电子电导率和空穴电导率。
By applying Wagner polarization measurement,the effect of antifoggants on electron conductivity and hole conductivity of silver bromide iodide T-grain emulsions was studied.
利用Wagner极化法研究稳定剂和防灰雾剂对溴碘化银T-颗粒乳剂微晶体的电子电导率和空穴电导率的影响。
We now believe that these materials conduct by a process known as hole conduction.
现今我们知道，这些材料的导电过程是所谓“空穴导电”。
rate of generation
半导体中电子和空穴的
Electrons and Holes in Semiconductors
《半导体中的电子和空穴》
The motion of electrons or holes in semiconductor in electric field.
半导体中电子或空穴在电场中的运动。
Bipolar- Transistors that are able to use both holes and electrons as charge carriers.
双极晶体管-能够采用空穴和电子传导电荷的晶体管。
A vacant position in a crystal left by the absence of an electron, especially a position in a semiconductor that acts as a carrier of positive electric charge.
空穴在晶体中由于没有电子而造成的空位，尤指在半导体中可当作正极使用的空位
Hole is an charged electronic entity in semiconductors and insulators which have energies less than the Fermi level and participate in the electric conduction.
空穴是半导体和绝缘体中的一种带电体，其能量小于费米能，并且参与导电。
Dopant- An element that contributes an electron or a hole to the conduction process, thus altering the conductivity.
搀杂剂-可以为传导过程提供电子或空穴的元素，此元素可以改变传导特性。
Comparison of NO Contents and Cutaneous Electric Conduction Quantity at the Acupoints and the Non-acupoints
穴位和非穴位一氧化氮含量及导电量的比较
The smallest unit that supports electron flow in a semiconductor material ; a hole in P-type silicon or a free electron in N-type silicon.
在半导体材料中维持电流的最小单元,在P型硅中是空穴,在N型硅中是自由电子。
Majority Carrier- A carrier, either a hole or an electron that is dominant in a specific region, such as electrons in an N-Type area.
多数载流子-一种载流子，在半导体材料中起支配作用的空穴或电子，例如在N型中是电子。
Synthesis of Ordered Conducting Polymer Ultrathin Film and Its Application as Hole Injection Layer for Organic Light-Emitting Diode
导电聚合物有序超薄膜的合成及其作为有机电致发光器件空穴注入层
This equationis based on the hypothesis that the recombination of electron-hole pairs indirect band semiconductors is perfect optical transition without any others.
这公式是基于在直接带半导体中电子—空穴对复合全部是光跃迁的假设的。
Electron-and Hole-spin Relaxations in InAs/GaAs Single Quantum Dots
InAs/GaAs单量子点中电子/空穴自旋弛豫
A charge - carrying entity, especially an electron or a hole in a semiconductor.
带电体带电体，尤指一个半导体中的电子或孔穴
Hole- Similar to a positive charge, this is caused by the absence of a valence electron.
空穴-和正电荷类似，是由缺少价电子引起的。
Exciton is electron-hole pair held together by their mutual Coulomb interaction.
激子就是由电子和空穴在相互间的库仑力作用下，相互维持在一起的电子--空穴对。
A valence elect ron can move away f rom it satom, leaving it a hole.
价电子能够脱离其原子给原子留下一个空穴。