Study on the UV photo-sensitive characteristic and grain boundary barrier of ZnO thin films
ZnO薄膜紫外光敏特性及晶界势垒的研究
The low B-value of the grains and insignificant grain boundary barrier give a good linear resistance-temperature characteristic of the composite within a temperature range of -20￣250℃.
由于复合材料的晶粒具有极小的Ｂ值而晶界势垒也极小，使得该复合材料的电阻－温度特性呈现出良好的线性特征。
A new interpretation for the origin the grain boundary barrier is oxide semiconductorceramics is proposed,It is suggested by the authors that the barrier originates from the dif-fusion of excess oxygen in grain boundaries during sintering.
提出了一个关于氧化物半导瓷晶界势垒起源的新观点，认为晶界势垒起源于烧结过程中外界氧在晶界中的扩散，与材料的结构、化学缺陷、掺杂、外界气氛、烧结工艺、组成状态等有密切关系，并用此理论解释了许多实验现象。
It is believed that the grain-boundary barrier of the thin.
结果表明,适当的掺杂量可以改善CdTe薄膜的结晶性能,降低晶界势垒高度,提高其导电性能。
The results show that the decomposition accompanying with oxidation is useful forincreasing the surface state density and the height of grain-boundary barrier, and therefore improves the nonlinear property of TiO_2 capacitor.
结果发现，在晶界处发生的热分解氧化反应能增加界面态密度，提高晶界势垒高度，从而改善ＴｉＯ２电容压敏电阻器的非线性性能。
The carrier transport characteristics of the InN thin films have been explained successfully on the basis of a grain-boundary barrier model, where the accumulation of holes at the grain boundaries has been found to play a key role.
在晶界势垒模型的基础上 ,发现InN薄膜的电导特性取决于材料内部的晶界势垒高度 ,载流子输运特性是由于空穴在晶界处的积累决定的 。
Study on the UV photo-sensitive characteristic and grain boundary barrier of ZnO thin films
ZnO薄膜紫外光敏特性及晶界势垒的研究
Capacitance-voltage measurement of grain-boundary barrier in TiO2 varistors;
电容—电压测试在TiO_2压敏材料晶界势垒研究中的应用
The Schottky Barrier at Grain Boundaries of Polycrystalline Ferroelectric Semiconductors
多晶铁电半导体晶界处的肖特基势垒
schottky gate fet
肖特基势垒栅场效应晶体管
enhancement type schottky barrier fet
增强型肖特基势垒场效应晶体管
Study on Nucleation Potential Barrier of Amorphous Si Crystallization by Laser Annealling
激光退火实现非晶Si晶化的成核势垒研究
Influence of barrier height of the front contact on the amorphous silicon and microcrystalline silicon heterojunction solar cells
前端接触势垒高度对非晶硅和微晶硅异质结太阳电池的影响
PROGRESS ON FIRST-PRINCIPLES CALCULTIONS AND EXPERIMENTAL RESULTS OF SINGLE-CRYSTALLINE MAGNETIC TUNNEL JUNCTIONS WITH MgO BARRIERS
MgO单晶势垒磁性隧道结的第一性原理计算和实验研究
We adopted the pseudopotential method and the first principle to calculate the alloy disorder effect of the atoms surrounding the impurity atoms.
采用第一原理赝势法计算，分析和讨论了混晶无序效应对电子热俘获势垒精细结构的影响。
Influence of Metal/Organic Interface Barriers on the EL Efficiency in Single-layer Organic EL Devices
金属 /有机界面势垒对单层有机电致发光器件发光效率的影响(英文)
A type of transistor in which very thin barriers ( by means of etching techniques ) are used, thus permitting the frequency range to be extended to 100 MHz.
使用很薄势垒的一类晶体管(采用刻蚀技术),因而,其使用频率范围可达100兆赫。
schottky barrier photodiode
肖特基势垒光电二极管
cottrell lomer barrier
科特雷耳 洛末势垒
metal semiconductor barrier
金属 半导体接触势垒
ping-pong memory
乒乓式电位势垒存储器
The ISF is the world governing body of softball.
国际垒球联合会是垒球的世界性管理机构。
schottky barrier mos
肖特基势垒栅金属氧化物半导体
Schottky-barrier avalanche photodiode
肖特基势垒雪崩光电二极管