Measuring the band gap of silicon using silicon photocells;
利用硅光电池测量硅单晶半导体材料的禁带宽度
It also showed that the optical absorption edge of the annealed film appeared shifted towards the longer wavelength side and the band gap decreased by 0.
光学性质显示退火处理的薄膜吸收边缘明显的向长波的方向移动,发生红移现象,而且禁带宽度减少了0。
Based on the simulation, the best band gap and the optimal thickness of each junction were carried out.
本文对a Si∶H叠层薄膜太阳电池进行了计算机模拟,提出各层电池的禁带宽度最佳匹配以及各层电池本征层的最佳厚度的设计方案。
A thick film has a red shift of direct transition bandgap than thin films due to the strong interface interaction.
由于厚膜中存在较强的表面相互作用,厚膜的直接跃迁禁带宽与薄膜相比发生了红移。
The thickness and the bandgap of TiO_2 nano films were calculated by using the UV-VIS spectra of the films.
采用反胶束法制备TiO2纳米溶胶,利用浸渍提拉方法制备TiO2薄膜,通过对膜进行紫外可见光谱分析,探讨了影响TiO2纳米膜厚度和禁带宽的各种因素。
The thickness and the bandgap of TiO2 nano films were calculated by using the UV-VIS spectra of the films.
通过对膜进行紫外可见光谱分析,探讨了影响TiO2纳米膜厚度和禁带宽度的各种因素。
Relationship Between Intrinsic Breakdown Field and Bandgap of Materials;
本征击穿电场与禁带宽度的关系
Determined the bandgap of ncSi using a heterojunction CV;
电容-电压法测定纳米硅的禁带宽度
Determination of bandgap in SiGe strained layers using a pn heterojunction C-V;
pn结电容-电压法测量应变SiGe禁带宽度
The first order forbidden energy?band width is the biggest when cylindrical radius is about 40 ?.
圆柱半径在40 左右时,第一禁带宽度最大。
1. For a certain apodization function, the band width, steepness of the band
1. 对于同一切趾函数，光栅反射谱的禁带宽度、禁带边缘陡峭性和旁瓣
Silicon and germanium, for instance, have forbidden bands whose widths are 1.1 and 0.65eV, respectively.
例如，硅和锗的禁带宽度分别为1．1电子伏和0．65电子伏。
Study of Transparent Conducting CdO Thin Films with a Tunable Band-gap Deposited on Organic Substrates;
有机衬底上沉积禁带宽度可调的CdO透明导电薄膜
The methods of bandwidth increasment and the problems of one-dimensional photonic crystal omnidirectionsl reflector are discussed.
讨 论了增加禁带宽度的方法及一维光子晶体全角度反射镜中存在的问题。
Results indicate that the optical band gap of the CN x films is decreased with the increasing nitrogen concentration, accompanied with the reflectance increase of the films.
结果表明：随着薄膜中氮含量的增加，碳氮薄膜的光学禁带宽度减小，红外反射率增加。
First-Principles Investigation on Peristylapolyenes and the Narrow of Band Gap of Anatase TiO_2 by N-doping;
盆烯分子与N掺杂锐钛矿型TiO_2体系所致的禁带宽度变窄现象的第一性原理研究
impulse bandwidth
脉冲(频)带宽(度)
Widening of PBG in 1D Photonic Crystal and Design of Filter;
一维光子晶体禁带扩宽及滤波器设计
Design of a GaN HEMT Class F Power Amplifier
宽禁带GaN HEMT F类功率放大器设计
Studies of Impurities in a Wide Band Semiconductor SiC
宽禁带SiC材料中杂质的分析研究
No Vehicles Over Width Shown
禁止宽度超过所显示的车辆驶入
width of main sideband of modulated vision signal
图像信号主边带宽度
Flat belt drive Belt and pulleys-widths
GB/T11359-1989平带传动平带及带轮的宽度
Preparation and Doping of Wide Band Gap Cubic Boron Nitride Films;
宽禁带立方氮化硼薄膜的制备与掺杂研究
Characterization for the Structures and Properties of Wide Bandgap Semiconductor In_2O_3 by First-principle Calculations
宽禁带半导体In_2O_3结构和性能的第一性原理研究
Development of Solar-blind Ultraviolet Detectors Based on Wide Bandgap Semiconductors
宽禁带半导体日盲紫外探测器研究进展
Recent Development and Future Perspective of Silicon Carbide Power Devices--Opportunity and Challenge
宽禁带半导体SiC功率器件发展现状及展望