The constraint formula of these bit number of classes l_(jm),maximum hierarchy number of the module M_j,maximum fanin number N_(fanin(max)) and maximum fanout number N_(fanout(max)) of gating circuit were deducted.
在超前进位加法器基本单元电路及其组合方案优化设计的基础上,将微电子工艺水平制约下的速度、面积、功耗约束经分析归纳转化为超前进位加法器全面优化的结构参数约束,推导出了组位数ljm模块层数Mj与门电路最大扇入Nf anin(m ax)、扇出Nf anout(m ax)的约束公式。
An improved high fan-in domino circuit is proposed.
设计实现了一种改进的高扇入多米诺电路结构。