In semiconductors,there is the phenomenon of valley-orbit splitting.
通过引进电子在分裂能级上的配分函数和综合平均能量增量,得到了适用于施主能级分裂的分布函数。
Investigation of the acceptor and donor in fast neutron irradiated Czochralski silicon;
快中子辐照直拉硅中受主和施主的研究
he electrical properties of (MgCoNi)O samples doped with small amounts of donor La2O3are studied.
研究了掺杂Ｌａ２Ｏ３施主的（ＭｇＣｏＮｉ）Ｏ系氧敏材料性能。
donors appeared.
退火处理时，辐照缺陷的退火及其与硅单晶中氧、碳杂质的相互作用，使得辐照后的ＣＺＳｉ退火行为比较复杂，在７００～９００℃退火范围内电阻率值低于真实电阻率值，即出现了施主现象。
The mechanisms for the effect of hydrogen on the enhancement of oxygen diffusion and formation of thermal donors and oxygen precipitates are introduced.
总结了氢对直拉硅(CZ)单晶中缺陷影响的研究进展,主要介绍了氢促进氧扩散、热施主和氧沉淀生成,以及高温氢气退火促进直拉硅片空洞型缺陷消除的机理,其中氢促进硅中氧的扩散被认为是氢对直拉硅中的缺陷产生影响的主要原因。
The formation behavior of thermal donors (TD) in cast multicrystalline silicon was investigated by the means of four-probe resistivity measurement and Fourier transmission infrared spectroscopy (FTIR).
采用四探针电阻率测试仪和傅立叶红外光谱测试仪,研究了铸造多晶硅中热施主的形成规律。
The results in dicated that sfter Ge doped in CZSi,thermal stability of CZSi at 450 ℃ annealing had been risen,concentration of thermal donor had been redu ced,mechanical strength and material quality cna achieve improvement l argely.
发现Ge能抑制CZSi中氧施主的形成，降低热施主的形成速率和最大浓度，改善硅材料的内在质量，提高硅片的机械强度，以杂质量级掺入到硅中的Ge对提高硅材料的综合性能是有益的。
The effects of donor doping on the microstr utures and dielectric properties of polycrystal strontium titanate and barium strontium titanate are studied in a systematic way.
系统地研究了施主掺杂对多晶SrTiO_3,(Sr,Ba)TiO_3微观结构和介电性能的影响。
Usually the resistivity of BaTiO3-based PTC ceramics reduces gradually with the density increase of the donor doping until it reaches a const.
通常BaTiO3陶瓷的电阻率在开始时都随施主掺杂浓度的增加而降低,当施主掺杂浓度达到某一值时,电阻率降至最低,而后随着施主掺杂浓度的提高,电阻率则迅速上升。
High temperature conductivity of donor doping TiO 2 ceramic were measured in detail;XRD analysis indicted that a small amount of donor dopant does not change the crystal structure significantly.
对施主 V2 O5掺杂 Ti O2 材料的高温电导进行了详细的测试 ;XRD分析表明少量施主掺杂并未改变材料的金红石结构 ;施主掺杂样品在较高温度测试时 ,在高氧分压一侧 ,发生电导类型转变 ,从而使测氧范围变窄。