Two acceptor levels of vanadium at EC-0.
掺入的钒在4 H-SiC中形成两个深受主(能)级,分别位于导带下0。
Chemical Model of Crystal Defect of Acceptor-doped BaPbO_3;
受主掺杂BaPbO_3晶体的缺陷化学模型
Investigation of the acceptor and donor in fast neutron irradiated Czochralski silicon;
快中子辐照直拉硅中受主和施主的研究
Based on the defect chemistry of undoped barium plumbate(BaPbO3),the charge compensating mechanism of acceptor-doped BaPbO3 was discussed by the measure-ment of the equilibrium electrical conductivity by a four-probe direct current technique as a function of oxygen pressure.
在未掺杂铅酸钡(BaPbO3)缺陷化学研究的基础上,采用高温平衡电导法分析了铝(Al)受主掺杂BaPbO3的缺陷补偿机理,建立了受主掺杂BaPbO3的缺陷化学模型。