Analysis on Entanglement Properties of Electron Hole Pair for Electron Tunneling Through A Single Square Barrier;
电子-空穴对在势垒隧穿中的纠缠特性分析
rate of generation
半导体中电子和空穴的
Electrons and Holes in Semiconductors
《半导体中的电子和空穴》
The motion of electrons or holes in semiconductor in electric field.
半导体中电子或空穴在电场中的运动。
Electron-and Hole-spin Relaxations in InAs/GaAs Single Quantum Dots
InAs/GaAs单量子点中电子/空穴自旋弛豫
A valence elect ron can move away f rom it satom, leaving it a hole.
价电子能够脱离其原子给原子留下一个空穴。
Hole- Similar to a positive charge, this is caused by the absence of a valence electron.
空穴-和正电荷类似，是由缺少价电子引起的。
Electric current: Movement of electric charge carriers.
电流:带电亚原子粒子、离子或空穴等荷电粒子的运动。
Exciton is electron-hole pair held together by their mutual Coulomb interaction.
激子就是由电子和空穴在相互间的库仑力作用下，相互维持在一起的电子--空穴对。
The Electronic Structures and Transport Properties of Hole-doped LiCoO_2 Materials;
空穴掺杂LiCoO_2体系的电子结构与输运性质
The other way was to knock a bound electron off a neutral atom creating simultaneously an electron and a hole.
另一种方法是把束膊电子从中性原子中撞出，同时产生电子和空穴。
Bipolar- Transistors that are able to use both holes and electrons as charge carriers.
双极晶体管-能够采用空穴和电子传导电荷的晶体管。
The density of holes in the base is less than the density of free electrons in the emitter and collector.
基极中空穴的密度小于发射极和集电极中自由电子的密度。
Under application of an electric field, the electron and hole move in opposite directions at different velocities.
在电场的作用下，电子和空穴以不同的速度沿着相反的方向运动。
White OLEDs with efficient hole injection layer MoO_3 and high-mobility electron transport layer
具有高效空穴注入的高电子传输层的白光电致发光器件
The vacant place is taken by one of the outer electrons which thus leaps from an outer to an inner "shell".
真空穴由一个从外“壳”跃至内“壳”的外层电子来填充。
Majority Carrier- A carrier, either a hole or an electron that is dominant in a specific region, such as electrons in an N-Type area.
多数载流子-一种载流子，在半导体材料中起支配作用的空穴或电子，例如在N型中是电子。
A vacant position in a crystal left by the absence of an electron, especially a position in a semiconductor that acts as a carrier of positive electric charge.
空穴在晶体中由于没有电子而造成的空位，尤指在半导体中可当作正极使用的空位