Study on Au Metal/n-type Semiconductor GaN Schottky Barrier;
金属/n型半导体(Au/n-Ga N)肖特基势垒的研究(英文)
When the Schottky barrier height(Eb)is higher than 0.
当TiO2/TCO的肖特基势垒(Eb)大于0。
Based on the characteristics of the electronic state in ZnO varistors, Schottky barrier at interface influenced the conductance properties and the dielectric properties.
基于ZnO压敏电阻器的电子态特征 ,界面肖特基势垒不仅对其导电性能 ,而且对其介电性能也有决定性的影响 。
Study on annealing on Au/n-ZnO Schottky barriers characteristics;
Au/n-ZnO肖特基势垒特性的退火行为研究
The grown schottky barriers show good rectifier characteristics by testing the I-V characteristics of the structure of Ag-SiOx-nGaAs and Au-SiOx-nGaAs.
应用化学电共沉积法在Ti片、导电玻璃和导电PI基片上制备了GaAs多晶薄膜,并在薄膜上应用电子束蒸发淀积了一层超薄的SiOx,然后采用PVD法在其上淀积一层金属薄层,制备出MIS结构的肖特基势垒。
The Schottky-barrier of crystalloid and Freundlich adsorption isotherm on solid surface are used to explains the relation between SnO2 conductance and the volume fraction on tested gas and the operating temperature.
为了分析CMOS SnO2气体传感器的工作,有必要建立合适的模型,采用晶粒边界的肖特基势垒模型和固体表面对气体的Freund lich等温吸附很好地解释了SnO2的电导与检测气体体积分数工作温度之间的关系,利用ANSYS 7。
According to the photoyield model, the detector quantum efficiency can be improved by utilizing PtSi thin film optical cavity structure and by reducing Schottky-barrier height.
由光产额模型可知,采用薄PtSi光腔结构和降低肖特基势垒可提高量子效率。
A 1024-element PtSi Schottky-barrier infrared charge coupled device(CCD) line image sensor has been developed.
介绍了我们研制的1024元线列PtSi肖特基势垒红外电荷耦合器件(CCD)。
schottky barrier photodiode
肖特基势垒光电二极管
schottky gate fet
肖特基势垒栅场效应晶体管
schottky barrier mos
肖特基势垒栅金属氧化物半导体
Schottky-barrier avalanche photodiode
肖特基势垒雪崩光电二极管
enhancement type schottky barrier fet
增强型肖特基势垒场效应晶体管
The Schottky Barrier at Grain Boundaries of Polycrystalline Ferroelectric Semiconductors
多晶铁电半导体晶界处的肖特基势垒
A STUDY ON STATIC I-V CHARACTERISTICS FOR SILICON CARBIDE SCHOTTKY BARRIER DIODES;
碳化硅肖特基势垒二极管静态特性的研究
Iridium Silieide Schottky Barrier Infrared Focal Plane Array
硅化铱肖特基势垒红外焦平面阵列技术
Effects of High-temperature Electron Irradiation in n-GaN Schottky Barrier Diode;
n-GaN肖特基势垒二极管的高温电子辐照效应
The Theoretical and Experimental Study for 6H-SiC Schottky Barrier Source/Drain MOSFET;
6H-SiC肖特基势垒源漏MOSFET理论和实验的研究
Gamma-ray radiation effect on Ni/4H-SiC SBD
Ni/4H-SiC肖特基势垒二极管的γ射线辐照效应
Physical Connotation of Average-Bond -Energy and Study of Schottky Barrier and Heterojunction Band Offset;
平均键能物理内涵与肖特基势垒和异质结带阶的研究
Studies on Photoelectric and Transport Properties of One-dimensional SnO_2 and ZnO Nanostructures Schottky Barrier;
一维ZnO、SnO_2纳米结构肖特基势垒的光电输运性质研究
As an example, Schottky barrier diode characteristics is simulated using this method.
以肖特基势垒二极管为例，应用该方法，实现了高接触势垒情形下的正反向电流模拟。
This abnormal behavioral of heterogeneity-junction can be explained by Schottky potential asymmetrical.
异质结的这种反常的随温度变化的关系可以用肖特基势垒不均匀性理论解释。
In this paper, a new method of complete calibration of six-portmeasurement system is presented which uses the low-barrier Schottky diode detectors for power detection.
本文提出了用肖特基低势垒二极管检波器检测功率的六端口测量系统整体校准的新方法。
cottrell lomer barrier
科特雷耳 洛末势垒
low-power Schottky diode
低功率肖特基二极管