Most used anticorrosion sealants contained dichromate which was soluble ever before.
研究了咪唑-钼酸胺体系在聚硫密封剂中的阻蚀效果。
A reactive ion etching(RIE) cleaning the residual resist layer away by O_2 was presented in UV-imprint lithography.
针对紫外(UV)压印光刻在压印工艺过程中会产生阻蚀胶残膜的技术特点,采用以O2为反应气体来清除阻蚀胶残膜的反应离子刻蚀(RIE)工艺方法,研究了不同的反应气体流量、反应腔室压力、射频功率等刻蚀参数对刻蚀速率和刻蚀各向异性的影响,得到了刻蚀速率和刻蚀各向异性随各刻蚀参数的变化趋势图。
Asymmetric resist profile induced by spin coating and polymerization of resist with anomalous profile in exposure process are main problems in imprint lithography alignment.
针对高速旋涂造成标记区阻蚀胶薄膜覆盖不对称和压印曝光造成标记区薄膜聚合的问题,利用压印光刻压印曝光固化脱模的工艺原理,提出了用压印预处理标记表面薄膜来优化阻蚀胶层厚度和形貌的工艺方法。
The results show that the stress state of UV-curable resist film mainly depends upon the period an.
针对压印光刻工艺实现图章保真复型对阻蚀胶薄膜的均匀度和应力分布的要求,对匀胶过程中的时间、转速和加速度等参数进行了分析,并采用基片曲率法的Stoney公式及其近似计算公式,对不同参数环境下的薄膜应力及应力梯度分布作了计算分析。