The coupled twins induced by impurity atom in FCC crystal;
杂质原子在面心立方晶体中诱发的成对挛晶
Numerical simulation of the dynamic interactions between dislocation and solute atoms;
位错与溶质原子间动态相互作用的数值模拟研究
Dynamic Strain Aging (DSA) is a strengthening phenomenon in metals and alloys caused by the interaction between the diffusive solute atoms and the moving dislocation.
动态应变时效是在金属和合金中 ,移动着的溶质原子和运动中的位错发生交互作用时所出现的一种强化现象。
Dynamic strain aging is caused by the interaction between the moving dislocations and the mobile solute atoms.
动态应变时效是由位错与溶质原子的相互作用引起的 ,只考虑位错与位错芯内的溶质原子 (位错芯气团 )的相互作用 ,在位错热激活运动机制的Zerilli Armstrong热粘塑性本构模型的基础上 ,加以改进 ,并加入位错和位错芯气团的相互作用的影响 ,建立了一种可定量描写动态应变时效现象的本构模型 。
Monte Carlo simulation of the interaction of a dislocation with solute atoms
位错和溶质原子交互作用的蒙特卡罗模拟
Based on a mechanism proposed for diffusion of a solute atom-vacancy complex the diffusion coefficients and activation energies of some solute atoms,which diffuse anomalously fast in HCP crystals,are calculated.
根据本文提出的置换溶质原子－空位复合体扩散的机制，估算了ＨＣＰ晶体中某些具有异常快速扩散现象的溶质原子的扩散系数，结果表明复合体扩散机制可以很好地解释此现象。
Experimenial results indicate that the existance of asmall amount solute atoms in the dilute aluminium alloy obviously elevates the height of wholestress,delays the emergence of cyclic softening and drops the height of internal friction andultrasonic attenuation.
结果表明,稀 Al 合金中少量溶质原子的存在提高应力的整体高度,推迟循环软化的出现,降低疲劳过程中的内耗值及超声衰减值。
By using molecular dynamics simulation the effect of atomic mass of dopants on lattice vibration in silicon has been researched,the evolution of phonon scattering from point defects has been explicitly displayed in the atomic scale,which can not be currently observed by actual experiments.
本文采用分子动力学方法,重点研究了掺杂原子质量对硅晶格振动行为的影响,在原子尺度上清楚地展示出目前实际无法展现的点缺陷影响声子散射的演化过程。
Simulation of Atomic Coefficient and Radiation Losses of Impurity Using Non-coronal Model on HL-2A;
HL-2A杂质原子参数和非日冕辐射的模拟
When the electrical characteristics are dictated by impurity atoms, the semiconductor is said to be extrinsic semiconductors.
如果半导体的电学性质归因于其中的杂质原子，那么它将被称为杂质半导体。
The current distribution around a single impurity in a planar quantum wires is studied in this paper.
微小器件内杂质原子的存在是影响电流分布的主要因素之一。
Reaction and Synthesis of Heterocycles or Heteroatom Compounds in Ionic Liquids;
离子液体介质中杂环、杂原子化合物的反应及合成研究
The Determination of 21 Impurities in Osmium by AES
原子发射光谱法测定锇中21个杂质元素
Lattice Vibration of One-Dimensional Monatomic Chain with an Interstitial Impurity;
含有间隙式杂质的一维单原子链的晶格振动
Determination Impurities in Glyphosate TC by Ion Chromatography
离子色谱法测定草甘膦原药中的杂质成分
First-Principles Calculation of Electronic Structure and Optical Properties of Mg_2Si with Doping
掺杂Mg_2Si电子结构及光学性质的第一性原理计算
Atomic Spectrometric Determination of Impurities in Pure Tungsten and Components in Tungsten-based Alloys
原子光谱分析法测定纯钨中痕量杂质和钨基硬质合金中组成元素
First-principles Study of the Endoping Effect on Electron Transport Properties of the CNT-C_(60)-CNT Junction
内掺杂对CNT-C_（60）-CNT分子结电子输运性质影响的第一性原理研究
Determination of impurity elements in pure copper by inductively coupled plasma atomic emission spectrometry
电感耦合等离子体原子发射光谱法测定纯铜中杂质元素
Determination of phosethyl-Al and the impurities by Ion-exchange chromatography
离子色谱法同时测定三(乙基膦酸)铝原药纯度及各杂质离子的含量
Chemical reagent-General method for the determination of metals by solvent extraction followed by AAS
GB/T10726-1989化学试剂溶剂萃取-原子吸收光谱法测定金属杂质通用方法
The interstitial atoms of gold diffuse into silicon at a rate several orders of magnitude faster than the group III and V impurities.
金的填隙原子向硅扩散的速率比III族和v族杂质快几个数量级.
Determination of Impurity Aluminium in Industrial Silicon by Air-Acetylene Flame AAS
空气-乙炔火焰原子吸收光谱法测定工业硅中的杂质铝
Heterobimetallic Chalcogenide Cluster Polymers: Syntheses, Structures and Third-order Nonlinear Optic Properties;
杂双金属硫属原子簇聚合物的合成、结构及三阶非线性光学性质
Computational Studies for Excited States of Small Atomic Clusters and Heterofullerenes;
原子小团簇激发态性质及掺杂富勒烯密度泛函计算研究
First-Principles Study of Electronic Structure of Complex in Structural Materials;
结构材料中杂质复合缺陷的第一原理电子结构研究