Photoluminescence mechanisms,p-type doping,p-n junction and diluted magnetic property of ZnO-based semiconductor thin film are discussed in detail.
详细探讨了ZnO薄膜材料的发光机理、P型掺杂、p-n结的生长和稀磁性能,并对国内外的发展情况和存在问题进行了分析和探讨。
ZnO thin films have many excellent properties such as photoelectricity, p-n junctionetc.
ZnO薄膜是一种具有优良性质的材料,如光电、p-n结特性等,并有多种制备方法,其性质取决于不同的掺杂组分。
In this arti- cle the basic structures of photoconductive,schottky barrier,p-n junction and other types of ZnO ultraviolet photodetec- tors are introduced briefly.
简要介绍了ZnO基紫外光探测器采用的基本结构:包括光电导型、肖特基势垒型以及p-n结型;比较了不同结构的ZnO紫外光探测器所具有的优缺点,对光电导型、肖特基势垒型以及p-n结型紫外光探测器近几年的发展分别进行了详细评述。
The p～n junctions were fabricated by developing La0.
通过考虑p~n结耗尽层的厚度,对观察到的实验现象进行了解释。