The electron trap effect of the sulfur+gold sensitization center on the photoelectron behaviors;
S+Au增感中心的电子陷阱效应对光电子行为的影响
It is found that the trap effect of the sensitization centers varies from the hole trap to deep electron trap with the change of sensitization conditions.
实验发现,随增感条件的不同,增感中心发生了由空穴陷阱作用向深电子陷阱作用的转变。
The influence of electron traps in silver bromide microcrystal, on .
通过测量溴化银光作用过程的时间分辨谱,讨论了卤化银晶体中电子陷阱对光电子运动行为的影响,分析了电子陷阱效应同增感时间之间的关系以及两个一级衰减区间寿命值同增感时间的关系。
Electron paramagnetic resonance(EPR) was also used to investigate electron traps in the phosphor.
用喇曼和顺磁共振 (EPR)等手段表征了掺Si4+ 后BaFBr∶Eu2 + 中电子陷阱的结构 ,并根据此结构解释了其激发波长的红移量比其它低价阳离子掺杂都高的原因。
By comparing the electron signal with that of pure specimen,it is found that the free photoelectrons decay time is delayed 338ns by the introduced shallow electron traps.
对比未掺杂样品发现,掺杂引入的浅电子陷阱使样品中的自由光电子衰减时间延长了338ns,衰减过程中出现一个明显的一级指数快衰减区;较高浓度掺杂情况下,测量了光作用产物对光电子衰减的影响,分析表明,光作用产物是具有深电子陷阱作用的银簇。
The effect of Ruthenium dopant on photographic sensitivity by varying the dopant amount and location in model sliver bromide cubic emulsions has been studied It is concluded that doping Ruthenium, which functions as shallow electron traps inside sliver bromide crystal, is beneficial for increasing sensitivit
研究了浅电子陷阱掺杂剂———钌盐Ru (Ⅱ )加入纯溴立方体乳剂中 ,对感光度的影响 ,结果表明在乳剂颗粒的一定位置 ,掺杂一定量钌盐能明显提高乳剂感光度。
To describe the photoelectron rise and decay process of AgCl microcrystals doped with [Fe(CN) 6] 4-, a kinetics model composed of three intrinsic centres and a shallow electron traps(SETs)is set up, and further more, a set of differential equations is deduced.
为了描述在晶体生长阶段掺入 [Fe(CN) 6 ]4 - 的立方体AgCl微晶中光电子的产生与衰减过程 ,建立了一种由三个固有中心和一个浅电子陷阱 (SETs)组成的动力学模型 ,并引出一组微分方程 。
According to the basic model that describes the microcosmic dynamics process of light-generated carriers,it is analyzed that the free photoelectron decay time changes with the trap depth and density of shallow electron traps.
依据描述卤化银微晶中光生载流子的微观动力学过程的基本模型 ,分析了自由光电子衰减时间随浅电子陷阱深度和密度的变化情况 ,从而对浅电子陷阱的阈值效应进行了讨论 ,给出了确定卤化银乳剂中浅电子陷阱最佳掺杂条件的依据。
Doping Characteristics of Shallow Electron Traps in Silver Halide Microcrystals;
卤化银微晶中的浅电子陷阱掺杂特性
Research on the Electron Trap and Properties of ZnO Semiconductor Material;
氧化锌基半导体材料电子陷阱形成及性能研究
The Study on Electroluminescence and Charge Carrier Trap in Polyimide Films;
聚酰亚胺薄膜电致发光和载流子陷阱的研究
"It's easy to fall into a trap, But hard to get out again"
堕入陷阱易,脱离陷阱难
bent-gun ion trap
曲径式电子枪离子阱
The boys made snares to catch rabbits.
这些男孩子设置陷阱捕捉兔子。
Influence of Corona Intensity on the Trap Characteristics of HTV Silicone Rubber
电晕强度对HTV硅橡胶陷阱特性的影响
The Trap in the Prediction of a Shock Disturbed System and the Buffer Operator
冲击扰动系统预测陷阱与缓冲算子
The trapped lion emitted a roar of rase.
落入陷阱的狮子发出愤怒的吼叫。
Oxide-Trapped Charges Induced by Electrostatic Discharge Impulse Stress
由静电放电脉冲应力产生的氧化层陷阱电荷
To catch in or as if in a trap;ensnare.
设陷阱用陷阱或类似用陷阱的方式捕获；设陷阱捕捉
Luke, don't -- it's a trap!
路克，别...是陷阱！
Effects of Trap Models on Properties of a-Si Solar Cells
陷阱分布模型对非晶Si太阳电池性能的影响
Measuring Energy Distribution of Surface Trap in Polymer Insulation by PEA Method
电声脉冲法测量聚合物绝缘表面陷阱能级分布
Stimulated emission in porous silicon quantum dots:the role of trap states
多孔硅量子点的受激辐射:陷阱态的作用
Influence of Yb~(3+) Mole Fraction on Radiative Trapping of Yb∶GdAl_3(BO_3)_4 Crystals
Yb~(3+)离子摩尔分数对Yb∶GAB晶体辐射陷阱的影响
To set traps for game.
设陷阱为捕获猎物而设立的陷阱
Tunneling of Electrons Through Parabolic Quantum Well Structures with Double Barriers;
双势垒抛物量子阱结构中的电子隧穿