GaN based negative electron affinity(NEA) photocathodes show extensive prospect in ultraviolet signal detection.
负电子亲和势GaN光电阴极在紫外探测技术领域具有诱人的应用前景。
Based on the energy band characteristics of ordinary negative electron affinity emitter GaAs,the design of lengthening the diffusion lengths of negative electron affinity emitter GaAs was presented,and the special negative electron affinity emitter GaAs was designed.
根据通常负电子亲和势二次电子发射材料砷化镓的能级特点,提出延长负电子亲和势二次电子发射材料砷化镓的逸出深度的理论设计,设计出了特殊的负电子亲和势二次电子发射材料砷化镓。
The negative electron affinity material has the narrow forbidden gap and lower work function.
负电子亲和势材料具有较窄的禁带宽度、功函数低,在OLED的工作电场强范围内可以发射电子,同时在吸收有机材料所发光子能量后可以产生光电子发射,再次注入有机层,提高了电子注入效率。