A hyperbola model of I _D- V _Gcharacteristics of ferroelectric field-effect-transistors(FFETs) with Ag/Bi_4Ti_3O_ 12gate was brought forward,which is based on the theory of MOS device and the experimental data of the FFET.
在理论分析的基础上,结合铁电材料特性及实验数据,提出了Ag/Bi4Ti3O12栅n沟道铁电场效应晶体管转换(ID-VG)特性的双曲模型并进行了数值模拟。
Objective To investigate characteristics of p-channel field-effect-transistor(FFET) with Metal/ferroelectric/Metal/Insulator/Si substrates(MFMIS) structure.
目的研究金属/铁电/金属/多晶硅/绝缘层/Si衬底(MFMIS)结构的p沟道铁电场效应晶体管的性能。
Metal-ferroelectric-semiconductor field-effect-transistors (FFETs) with Ag/Bi_4Ti_3O_ 12 /p-Si gate were fabricated using the high quality Bi_4Ti_3O_ 12 on p-Si substrates prepared by Sol-Gel technique.
在溶胶-凝胶工艺获得高质量Bi4Ti3O12薄膜的基础上,制备了Ag/Bi4Ti3O12栅n沟道铁电场效应晶体管。
Due to the advantage of non-destruction read out, Ferroelectric Field Effect Transistor (FFET) is supposed to be the ideal potential memory device and has been widely investigated.
铁电场效应晶体管(FFET)存储器能够实现非破坏性读出，是一种比较理想的存储方式，因此从一开始就受到人们极大的关注。
double diffused mos fet
dmos场效应晶体管
metal insulator semiconductor fet
mis场效应晶体管
polysilicon fet
多晶硅场效应晶体管
vertical junction fet
垂向结型场效应晶体管
n-channel transistor
ｎ沟道场效应晶体管
vertical channel fet
垂直沟道场效应晶体管
linear load field effect transistor
线性负载场效应晶体管
multichannel fet
多通道场效应晶体管
gallium arsenide fet
砷化镓场效应晶体管
multiple gate finger fet
多梳形栅场效应晶体管
single gate FET
单栅极场效应晶体管
ion implanted fet
离子注入场效应晶体管
ion selective field effect transistor
离子选择场效应晶体管
field-effect-transistor resistor
场效应晶体管电阻器
offset gate fet
补偿栅场效应晶体管
normally on fet
耗尽型场效应晶体管
normally off fet
增强型场效应晶体管
junction gate field effect transistor
面结型栅场效应晶体管