Simulation of Reactive Ion Etching;
反应离子刻蚀的计算机仿真
With electron beam lithography and reactive ion etching techniques we are able to produce graphite patterns of sizes down to 50 nm.
首先,发现用聚焦离子束(镓离子)刻蚀高定向热解石墨,可以得到边缘整齐程度在几十纳米的石墨条,另外,用电子束曝光和反应离子刻蚀的工艺,可以得到最小尺寸为50nm的纳米石墨图型(nanosizedgraphitepattern,纳米尺寸的多层石墨结构)。
A reactive ion etching(RIE) cleaning the residual resist layer away by O_2 was presented in UV-imprint lithography.
针对紫外(UV)压印光刻在压印工艺过程中会产生阻蚀胶残膜的技术特点,采用以O2为反应气体来清除阻蚀胶残膜的反应离子刻蚀(RIE)工艺方法,研究了不同的反应气体流量、反应腔室压力、射频功率等刻蚀参数对刻蚀速率和刻蚀各向异性的影响,得到了刻蚀速率和刻蚀各向异性随各刻蚀参数的变化趋势图。
The Edge Effect in High Power RIE and Compensatory Approach;
反应离子刻蚀中的边缘效应及其补偿办法
Modeling for Charging Effect during RIE Processing;
反应离子刻蚀工艺中的充电效应
Surfaces topographies on Si wafer substrates with different dimesions have been produced by photolithography and reactive ion etching(RIE),and subsequently titanium dioxide films were coated on them via sol-gel method.
采用光刻技术和反应离子刻蚀法(RIE)先在硅表面制备出一系列平面尺寸不同的微图形阵列,然后采用溶胶凝胶(sol-gel)浸渍提拉法在其表面制备出均匀致密、表面粗糙度一致的锐钛矿型纳米晶TiO2薄膜。
The rooting effect of the structure in deep reactive ion etching (DRIE) process was investigated.
给出了加速度计的制作工艺流程,研究了解决深反应离子刻蚀过程中的过刻蚀现象的方法。
The silicon wafers were highly polished by reactive ion beam etching (RIBE) until surface micro-roughness was under 2 nm, and the hydrophilic glass and oxidized silicon wafer were dried and initially bonded in air for appropria.
利用反应离子束蚀刻(RIBE)对基片进行抛光,使得键合表面达到2 nm级的表面粗糙度。
An Investigation of Reactive Ion Etching for Through Silicon Via Packaging Technology
反应离子刻蚀在穿透硅通孔封装技术中的应用研究
RIE of SiO_2 Nanoparticles and Its Application in Preparation of Silicon Nanopillar Array
二氧化硅纳米颗粒的反应离子刻蚀及其在硅纳米针尖制备中的应用(英文)
Investigation on Technics and Property of Broadband Infrared Antireflective Sub-wavelength Structures Prepared by RIE on Ge Substrate
锗衬底上反应离子刻蚀制备宽波段红外增透结构的工艺及性能研究
Tolerance of ion beam etching on multilayer dielectric thin film reflector for spectrum reshaping
多层介质膜光谱调制反射镜的反应离子束刻蚀误差容限
Inductively coupled plasma reactive ion etching of InSb photovoltaic detector arrays
InSb阵列探测芯片的感应耦合等离子反应刻蚀研究
plasma sputter combined etching
等离子溅射复合刻蚀
APPLICATION OF ION BEAM MILLING TECHNIQUE TO JOSEPHSON DEVICE TECHNOLOGY
离子束刻蚀技术在约瑟夫逊器件工艺中的应用
Investigation of Inductively Coupled Fluorocarbon Plasma and Etching of SiO_2;
碳氟感应耦合等离子体及其SiO_2介质刻蚀研究
The Study of the Etching Process with RF Cold Plasma at Atmospheric-pressure;
常压射频冷等离子体在刻蚀工艺中的应用研究
barrel reactor plasma etching
圆筒形反应期等离子腐蚀
Behaviour of Ar~+ Ion in Reactive Ion Etching of Ⅲ-Ⅴ Compound
氩离子在反应离子腐蚀Ⅲ-Ⅴ族材料中的作用
Acceptable Error of Etching Depth in Ion Beam Etching Microlens
离子束蚀刻微透镜中蚀刻深度允许误差的研究
Electrochemical corrosion behavior of reactive plasma-sprayed TiN coatings
反应等离子喷涂TiN涂层电化学腐蚀行为
The Study of Nanometer Effect Induced by Ar~(q+) Ions Impact on HOPG Surface;
Ar~（q+）离子与HOPG表面相互作用的纳米刻蚀效应研究
Study of Inductively Coupled Plasma Etch of InP and Fabrication of 14xxnm Pump Laser Diodes;
感应耦合等离子体刻蚀InP研究与14xxnm泵浦激光器制作
Generic specification of ion beam etching system
GB/T15861-1995离子束蚀刻机通用技术条件
NUMERICAL STUDIES ON ETCH PROFILES IN HIGH-DENSITY PLASMA;
高密度等离子体刻蚀轮廓的数值研究
Investigation of Etching SiCOH Films by Dual-Frequency Capacitively Coupled Plasma
SiCOH薄膜的双频等离子体刻蚀研究